Semiconductors

Stress imaging of Si microfabricated structures

Stress distribution analysis using Raman images

3D imaging revealed mechanical stress acting in shallow trenches at the edge of the active zone.

There is a linear correlation between the stress applied to Si and the Raman peak shift.

M.Komatsubara,T.Namzu,Y.Nagai,S.Inoue,N.Naka,S.Kashiwagi,K.Ohtsuki :Jph.J.Appl.phys.48(2009)04C021

Microscopic Raman spectrometer LabRAM Odyssey

  • Industry's highest level* stress resolution (*according to our research in 2022)
  • Capable of mapping up to 12 inch wafers
  • Temperature control holder can be used (please consult us separately regarding sample size)

 

AFM (atomic force microscope) Raman XploRA Nano

  • Acquire physical information by AFM and chemical information by Raman simultaneously
  • Stress distribution analysis on the outermost surface on the order of nm is possible.
LabRAM Odyssey
LabRAM Odyssey

高速高分辨显微共焦拉曼光谱仪

XploRA Nano
XploRA Nano

纳米拉曼光谱仪

» Link to Raman Imaging and Spectrometers
» Link to AFM Optical Platform

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