Semiconductors

Depth elemental profile analysis

Elemental analysis of compound semiconductor thin films by GD-OES

We compared the element distribution when changing the Al concentration during the formation of the intermediate layer AlGaAs film. It captures differences of more than a few percent in atomic ratio. In addition, we were able to perform the evaluation in a very short measurement time of 2 seconds.

GD-Profiler 2™
GD-Profiler 2™

Pulsed-RF Glow Discharge Optical Emission Spectrometer

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