Semiconductors

Foreign material elemental analysis of defective parts on SiC wafers

Identification of foreign elements that cause defects on SiC wafers

After confirming the defective area using an X-ray transmission image, the cause of the defect can be identified using elemental analysis.

Microscopic X-ray analyzer XGT-9000 Pro/Expert

  • Simple elemental analysis with no pre-treatment required and non-destructive
  • Introducing a new model equipped with an X-ray detector that can measure boron (B)
  • Quickly access measurement points with high-definition optical observation even in minute areas
  • A wide variety of image analysis software is also available.
XGT-9000
XGT-9000

X-ray Analytical Microscope (Micro-XRF)

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