It was found that stress is concentrated in areas where the Si band strength is strong (= thick film).
When the spectrum at tip-in was peak-separated, a peak shifted from the Si peak (520.48cm-1) was detected, indicating the presence of stress (strain).
When Tip out, the influence of bulk Si is strong, and when Tip in, only the signal near the outermost surface can be obtained.
Spectromètre Confocal Raman à Haute Résolution
AFM-Raman pour l'imagerie physique et chimique
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