Compound semiconductors enable the production of advanced power devices and active photonic devices such as light sources and detectors. Successful fabrication of such devices relies on the high quality of the underlying materials (SiC, AlGaN, GaN, GaAs, InGaAs etc.) and precise deposition of intended geometries on a wafer substrate.

Defects in materials such as imperfections in geometries, adversely affect yield and usually increase cost and development times of compound semiconductor devices