Impurity analysis in compound semiconductor wafers

We analyzed the spectrum of GaAs wafers using cathodoluminescence (CL) and confirmed the peaks of each level that contribute to light emission. As a result of acquiring CL images for each peak, we were able to confirm that carbon and copper were scattered.

• Compound semiconductor wafer defect evaluation
  • Non-destructive wafer defect distribution evaluation using PL mapping
  • Full-surface high-speed defect evaluation of 3-inch InGaP wafers
  • GaN wafer defect classification evaluation
  • Analysis of the same area using steady PL spectra and time-resolved measurements
• Micro area crystal defect evaluation
  • High spatial resolution defect evaluation using TEPL
• Impurity analysis in compound semiconductor wafers
  • Impurity analysis in GaAs wafers by cathodoluminescence
• Browse all applications related to crystal defect analysis