Semiconductors

Depth Elemental Profile Analysis for Semiconductor Raw Materials

<< Back to Raw Materials for Semiconductors

We introduce an analysis method that allows for the rapid and easy determination of the depth-directional distribution of elements in compound semiconductor thin films, where performance varies significantly depending on the composition ratio of elements.

GD-Profiler 2™
GD-Profiler 2™

Pulsed-RF Glow Discharge Optical Emission Spectrometer

» Link to Glow Discharge Optical Emission Spectrometry (GDOES)

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GD-Profiler 2™

The GD-Profiler 2™ provides fast, simultaneous analysis of all elements of interest including the gases nitrogen, oxygen, hydrogen and chlorine. It is an ideal tool for thin and thick films characterization and process studies.

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Trainings



Our trainers are experts in GDOES. They will provide trainings advice and guidance to make the most of your HORIBA Scientific instrument.
You will gain confidence and experience in the analysis of your samples.

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Technology & F.A.Q.

Glow Discharge Optical Emission Spectroscopy (GDOES)

GDOES is an analytical technique that provides both the surface/depth profile and the bulk elemental composition of solid materials and layers quickly, and with high sensitivity to all elements. Read more about this technique and its wide range of applications.

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