半導體

Phosphor plays a key role to obtain white light as for blue LED + phosphor and near ultraviolet LED + phosphors. In order to improve high bright white LEDs, it is necessary that the whole phosphor particle emits light homogeneously. When measuring with CL the phosphor used as white LED, the area which does not emit light in phosphor particle can be observed. CL system is used for evaluation of non-luminescent area to improve luminescent efficiency and characteristics.

Phase Modulated Spectroscopic Ellipsometry is an excellent technique for the highly accurate characterization of complete TFT-LCD device. The technique allows the determination of film thickness, optical properties but also more complex properties such as graded or anisotropic layers and effect of dopants. In the flat panel industry the pressure to reduce manufacturing coasts is and reliable metrology tools are required to control the different steps of the process. Spectroscopic ellipsometry is a non-destructive technique which presents advanced capabilities and proven reliability tailored for qualification and on-line production control.

CMP technology is essential in the manufacturing process of large scale semiconductor integrated circuits (LSI). Colloidal silica are widely used as CMP slurries because of their clean spherical shape. Colloidal silica was measured by Partica CENTRIFUGE and its measurement repeatability was confirmed.

Raman spectroscopy is a very well suited technique to determine both Ge fraction and strain in SiGe layers and Si cap layers. Moreover the possibility of using both UV and visible excitation lines on the same instrument is essential to study structures made up of a Silicon cap layer on top of a SiGe layer. The relative Ge content in the constant Si1-xGex layer is calculated from the visible Raman spectrum and the strain of the cap Si layer is derived from the UV Raman spectrum.

The concentration of oxygen in silicon wafers has a significant impact on their electrical resistance. Therefore, it is crucial to control the concentration of oxygen, even in extremely small amounts, in silicon wafers. However, a challenge arises when analyzing highly doped single crystals. Due to their unique properties and high doping levels, the analysis of oxygen in these samples becomes more difficult. The presence of impurities and dopants can interfere with the accurate measurement of oxygen concentration using FT-IR spectroscopy.

Carbon nanotubes (CNTs) are thin, light, and flexible string-like materials that are composed entirely of carbon atoms. CNTs easily aggregate, so it is essential to understand and control the state of aggregation in order to achieve the expected performance. For this purpose, an analytical method that can quickly evaluate wide particle size distributions (PSD) from isolated dispersion to aggregation, with high resolution, is necessary.

Liquid Crystal Modulation Spectroscopic Ellipsometry is an excellent technique for the highly accurate characterization of the compound semiconductor heterostructure AlGaN / GaN. Using the MM-16 spectroscopic ellipsometer it is a straightforward procedure to determine the film thickness and optical dispersions of the complete structure even where the film is several microns thick. The detailed knowledge of the optical parameters of AlGaN alloys is crucial for example for the design of opto-electronic devices. Furthermore, from the optical parameters a calibration curve could be constructed to provide a rapid and efficient determination of the Al content in the AlGaN layers. Thus Spectroscopic Ellipsometry also proves a non-destructive technique for AlGaN alloy composition determination. This method can be equally applied to other compound emiconductors such as SiGe, II-VI semiconductors or classical III-V semiconductors.

In this application note, Raman spectroscopy is explored as an easier and more flexible technique for quantifying common components in a CMP slurry, such as benzotriazole and glycine, without any sample preparation or costly consumables.

Spectroscopic ellipsometry is a powerful technique to characterize the thickness and optical constants of complex ferroelectric stacks with high accuracy and precision. Specific modelling features in this study include the characterization of the anisotropic sapphire substrate, rough overlayer and layer inhomogeneity with depth.

For multilayer structures it is always helpful and often necessary to know the properties of each film. Using the Jobin Yvon UNISEL NIR it is a straightforward procedure to investigate the thickness and optical properties of the complete PDP structure. To ensure high yields in quality and quantity the FF-1000 ellipsometer is dedicated to the flat panel industries with a fully automated large area sample stage able to accept samples up to 1000 mm x 1000 mm. This accurate, automated thin film metrology tool delivers both unique performance and proven reliability for online quality control of production processes.

Fast analysis of microscopic metal particles is an important application for engineering (e.g. engine wear analysis). Micro-XRF scanning and spot analysis of specific fragments identifies their chemical composition.

We carried out plating thickness and composition analysis on dual-layer NiP/Au plating on Cu contacts on a flexible printed circuit using a HORIBA X-ray analytical microscope. We successfully detected Au of ultra-thin layer without any sample preparation. The thickness results of Au and NiP plating were consistent with the provided values and with good repeatability.

Simultaneous imaging of transmission X-rays and fluorescent X-rays is effective to find defects inside electronic components.

Spectroscopic ellipsometry is a powerful technique for high accuracy characterization of the thickness and optical constants of GeSbTe multilayer system for rewritable optical disc applications. It was shown that measurement in the NIR range gives better accuracy for the analysis of these types of material. The use of the multiple sample analysis reduces parameter correlations and errors for the thinnest layers. Owing to the advanced modeling features included in the DeltaPsi2 software, it is a straightforward procedure to analyze such structures even with layers deposited on both sides of the substrate.

Spectroscopic Ellipsometers are optical thin film measurement tools for determining film thickness and optical constants (n,k) of thin film structures. They are widely used in the microelectronics, display, photonics, photovoltaics, lighting, optical and functional coating, biotechnology industries. When compared with other optical metrology instruments the unique strength of spectroscopic ellipsometers are based on their highly precise and simple experimental measurements plus physical and material information derived from optical constants characterization.

Our XGT-9000SL allows failure analysis at a microscopic level on a large sample, non-destructively, thanks to its large chamber capacity and its microprobes.

The combination of microbeam and thickness measurement capability makes the XGT-9000 a useful tool for the QC of semiconductors, which feature thin and narrow patterns. Thickness sensitivity depends on elements traced, but can be at the Angstrom level.

Phase Modulated Spectroscopic Ellipsometry is an excellent technique for the highly accurate characterization of complete OLED stacks. The technique allows the determination of film thickness, optical properties and the effect of dopants to the active layers. For very high throughput applications where large area flat panels are to be characterized in a production environment the Jobin Yvon FF-1000 ellipsometer has a fully automated sample stage able to accept samples up to 1000 mm x 1000 mm. This accurate, automated thin film metrology tool delivers both unique performance and proven reliability for on-line quality control of production processes.

μ-XRF is a non-destructive analytical technique which can inspect defects, even non-visible ones, inside a sample because of the high penetration of X-rays. This application note introduces failure analysis to detect ion migration, voids, and foreign matter on electronics using the XGT-9000, with key features of the vertical irradiation of a 10 μm probe and the simultaneous imaging of fluorescent X-rays and transmission X-rays.

The characterization of synthetic CVD diamond material by hyperspectral cathodoluminescence spectroscopy and imaging allows the detection and accurate location of the promising NV luminescent point defects for innovative solid-state quantum mechanical systems. In this work we performed CVD epitaxial growth on a pattern of micro-pillars etched on a diamond substrate. Cathodoluminescence (CL) analysis revealed that NV centres were successfully localized at the edges of the pillars.

High-k dielectrics are under investigation to replace the conventional SiO2 or SiOxNy gate dielectric in many applications of Complementary Metal Oxide Semiconductor (CMOS) devices. Hafnium aluminium oxides (HfAlO) were investigated in this study as they fulfill the physical properties required for such applications. The structure and composition of hafnium aluminate films as well as the HfAlO / Si interface play a very important role for the optimization of CMOS devices. For this study complementary optical techniques were used. VUV Spectroscopic ellipsometry and infrared spectroscopy (FTIR-ATR) provide accurate characterization of thin film thickness and optical properties near and above the bandgap.

In this Application Note Spectroscopic Ellipsometry, a standard optical characterization technique used to measure multi-layered thicknesses and optical constants (n,k), has been successfully used to characterize encapsulated OLED devices. This report also investigates the aging process of OLED. Spectroscopic ellipsometry is a powerful technique to characterize the thickness and optical constants of encapsulated OLED devices. For the case of non-transparent encapsulation the combination of ellipsometric measurements via the glass substrate and the powerful modelling features of DeltaPsi2 software make it possible to analyze “this reverse sample”.

The threading dislocation occurs easily in GaN crystal grown on sapphire substrates. It is said that this is caused by the large lattice mismatch of sapphire and GaN. The crystal may seem to be uniform in the SEM image, but the dark spot such as the threading dislocation can be observed when measuring the CL intensity image at the wavelength (362nm) which corresponds to the band edge emission.

Spectroscopic ellipsometry is an excellent technique for the highly accurate characterization of TFT-LCD display panels based on a-Si and LTPS technologies. Owing to the sensitivity of the UVISEL spectroscopic ellipsometer and the advanced modeling features included in the DeltaPsi2 software it is possible to detect in a multistack different a-Si layers processed by various methods. Moreover the spectroscopic ellipsometry measurements allow determination of the grain size of p-Si films and illustrate the ability to characterize the crystallinity of silicon with high accuracy.

Troubleshooting and defect analyses of components embedded within opaque resins are described, on both individual components and complete circuit boards. Quantitative analysis to the ppm level is ideally suited for ensuring compliance to the WEEE/RoHS directives.

OLED technology is playing an important role in display technology since it offers several advantages compared to LCD technology among which its efficiency and high display quality, a high contrast rate, lower energy consumption, etc. Furthermore, this technology has an ecological aspect since it uses organic recyclable materials. However the improvement of the performances of the devices produced by these technologies requires a precise knowledge of their optical and structural properties that could be provided by spectroscopic ellipsometry. This non destructive and sensitive optical technique is able to characterize layers with thicknesses of some angstroms and provides information regarding the state of the surface, the microstructure of composite materials, etc.

The combination of the XGT-5000’s ground breaking spatial resolution and sensitivity means it is the instrument of choice for fast analysis of electronic components, whether for analysis of restricted harmful elements (the WEEE/RoHS ‘lead free’ legislation), trouble shooting, or R&D.

Driven by applications like LED-backlit TVs and solid-state lighting, the global LED market is growing rapidly. The main challenges for general LED lighting include reducing overall production costs and increasing efficiency and lifetimes. The performance of a LED which is characterized by its wall-plug efficiency depends on the design and overall material properties of the LED thin film structure. Ellipsomentry may be used for the accurate determination of the thickness and optical constants of the LED device for both research and industrial applications. Accurate control of thickness and refractive index is vital for the optimization of device properties and for industrial quality control.

UVISEL ellipsometers have been used for the characterization of several systems of nanoparticles. This ellipsometric characterization involves the development of specific modeling tools available within DeltaPsi2 software. Through this report we illustrate the application of ellipsometry to the characterization of nanoparticle based samples. Our goal is to demonstrate that the technique can apply within a large panel of materials science. The HORIBA ellipsometric product line offers the most versatile hardware of the UVISEL series combined with the DeltaPsi2 software including unique modeling features to get the most of your applied work on this fascinating domain of modern physics.

We have performed a complete Raman polarized study of a single GaN nanowire using a confocal microscope together with a high resolution stage. The high spatial resolution of our Raman confocal instrument together with a piezoelectric stage demonstrates unambiguously the possibility to image the optical properties of nano-objects with a resolution better than 200 nm keeping the fill advantage of the polarization control under a confocal microscope.